Each of several items in a list, preceded by a bullet symbol for emphasis.
:
- - 0,5 GB DDR 266 MHz
- - 200-pin SO-DIMM
- - Λανθάνουσα κατάσταση CAS: 2.5
- - 2.5 V
Περισσότερα>>>
Short summary description Transcend 512MB MEMORY MODULE FOR SONY NOTEBOOK. (PCGE-MMDDR512) μονάδα μνήμης 0,5 GB DDR 266 MHz:
This short summary of the Transcend 512MB MEMORY MODULE FOR SONY NOTEBOOK. (PCGE-MMDDR512) μονάδα μνήμης 0,5 GB DDR 266 MHz data-sheet is auto-generated and uses the product title and the first six key specs.
Transcend 512MB MEMORY MODULE FOR SONY NOTEBOOK. (PCGE-MMDDR512), 0,5 GB, DDR, 266 MHz, 200-pin SO-DIMM
Long summary description Transcend 512MB MEMORY MODULE FOR SONY NOTEBOOK. (PCGE-MMDDR512) μονάδα μνήμης 0,5 GB DDR 266 MHz:
This is an auto-generated long summary of Transcend 512MB MEMORY MODULE FOR SONY NOTEBOOK. (PCGE-MMDDR512) μονάδα μνήμης 0,5 GB DDR 266 MHz based on the first three specs of the first five spec groups.
Transcend 512MB MEMORY MODULE FOR SONY NOTEBOOK. (PCGE-MMDDR512). Εσωτερική μνήμη: 0,5 GB, Τύπος μνήμης: DDR, Ταχύτητα μνήμης: 266 MHz, Συντελεστής μορφής μνήμης: 200-pin SO-DIMM, Λανθάνουσα κατάσταση CAS: 2.5